The characteristics of thick resist lithography technique different from those of traditional technique are analyzed on the principle of lithography process and computer simulations.
厚层抗蚀剂光刻是一种制作深浮雕结构的微细加工技术。
: During the fabrications of MEMS with thick resist lithography technique, most elements need better line width and vertical sidewall, so rigorous control of exposure dose and development time is necessary to get better patterns.
DILL曝光模型和MACK显影模型,编制了接触式曝光系统的厚层抗蚀剂光刻模拟软件,用其分析在理想曝光剂量条件下,抗蚀剂显影后的线宽和侧壁陡度随显影时间的变化规律,分析得出了给定厚度的抗蚀剂的显影时间,为实验工艺上严格控制显影时间提供依据。
Recently, lithograph of thick resist has been regarded as an effective and economical technology for manufacturing excellent high-aspect-ratio microstructures (HARMS).
近年来，作为制作优质大高宽比微结构的厚层抗蚀剂光刻术以其工艺简单、制作成本低等优点受到国际上广泛重视。
Considered the nonlinear factors existing in the exposure process of thick photoresist,an enhanced Dill model for thick photoresist is proposed,which improves the original Dill model and modifies the definition of Dill exposure parameters.
针对厚层抗蚀剂曝光过程中存在诸非线性因素的影响,更新Dill曝光参数的定义,建立了适合描述厚层抗蚀剂曝光过程的增强Dill模型。
