Presents a sequence of order-of-magnitude calculations based on the concepts of chemical kinetics and transport phenomena during the chemical mechanical polishing(CMP) process.
考虑抛光液/芯片的相界面氧化剂浓度和芯片氧化薄膜缺陷对材料去除机理的影响,提出化学机械抛光(CMP)中材料去除机理的量级估算方法,应用化学动力学及传质学等理论估算氧化薄膜的扩散深度量级和生成速率,采用纳米压痕仪模拟单个磨粒在芯片表面的压痕作用,应用线性回归方法分析载荷70 nN下,磨粒压入芯片的深度量级为10-11m。
Slurry flow weighs heavily on the performances of chemical mechanical polishing(CMP) process,wherein the pad surface will alter the flow features considerably.
抛光垫表面特性能可大大改变抛光液的流动情况,从而影响化学机械抛光的抛光性能。
For high-quality and high-efficiency chemical mechanical polishing(CMP) of multilayer interconnection in ultralarge-scale integrated(ULSI) circuit,the silica sol nano-abrasive with large-particle and lowpolydispersition was prepared by polymerization growth technique with control of constant liquid level.
为满足甚大规模集成电路(ULSI)互连结构高质量、高效率化学机械抛光(CMP)的要求,以LaMer模型为理论指导,对恒液面聚合生长法制备大粒径、低分散度硅溶胶研磨料的粒径增长阶段进行了机理分析,并讨论了加料速率对平均粒径及分散度的影响;优化加料速率为3。
Advanced Process Control Extends ECMP Process Consistency;
先进的工艺流程控制拓展电化学机械抛光工艺相容性(英文)
A new electrochemical mechanical polishing(ECMP) procedure was presented.
介绍了一种使用螺旋式线型工具电极的电化学机械抛光新工艺。
Study on Conditioner for Polishing Pad in CMP;
化学机械抛光用抛光垫修整器的研究
Study on Conditioning Technology of Polishing Pad in CMP;
化学机械抛光中抛光垫修整技术的研究
Chemical mechanical polishing for silicon wafer by composite abrasive slurry
利用复合磨粒抛光液的硅片化学机械抛光
Study on CMP Slurry of CVD Diamond Film;
CVD金刚石膜化学机械抛光液的研制
Electroplate and chemical mechanical polishing technology of ULSI
VLSI的电镀和化学机械抛光技术
Material removal characteristic of silicon wafers in chemical mechanical polishing
单晶硅片化学机械抛光材料去除特性
ECMP of Cu in the Preparation Process of ULSI
ULSI制造中Cu的电化学机械抛光
Study on Electrochemistry and Polishing Rate of Chemical Mechanical Polishing of Semiconductor Silicon Wafer;
半导体硅片化学机械抛光电化学与抛光速率研究
Influence of abrasive and chemical composition on chemo-mechanical polishing of MgO single crystal substrate
抛光液中磨料和化学成分对单晶MgO基片化学机械抛光的影响
Study on Chemical Mechanical Polishing of Tantalum Lithium Crystal Wafer;
光电子材料钽酸锂晶片化学机械抛光过程研究
Study on and Fabrication of Chemical Mechanical Polishing Tester with Electrochemical Testing System;
化学机械抛光电化学测试试验台的研制
Study on Pad Properties & Effects on Processing in CMP;
抛光垫特性及其对化学机械抛光效果影响的研究
Study on Dynamic Pressure and Temperature of Slurry in Chemical-Mechanical Polishing of Silicon Wafer
硅片化学机械抛光加工区域中抛光液动压和温度研究
Influencing Factors of Conditioning Effect about Polishing Pad Conditioning for Chemical Mechanical Polishing
化学机械抛光用抛光垫的修整对修整效果的影响因素
Study the application of pad in chemical mechanical polishing for sapphire wafer
抛光垫在蓝宝石衬底化学机械抛光中的应用研究
Study on Material Removal Mechanism for Non-contact CMP;
非接触化学机械抛光的材料去除机理研究
Synthesis of CeO_2 Nanoparticles and its Chemical Mechanical Polishing Performance
氧化铈纳米颗粒的合成及其化学机械抛光性能
Preparation and Size Classification of Alumina Series Abrasive Particles for Chemical Mechanical Polishing;
氧化铝系化学机械抛光磨料的制备及颗粒分级
