What this paper study including: (1) In the Czochralski crystal growth process, thermal radiation is one of the main method of heat transfer, the radiation transfer between surfaces takes the principle actor as the gas in the furnace has less affect in radiation process.
本文针对提拉法晶体生长全局特点,研究内容包括以下几个方面:(1)在提拉法晶体生长过程中,辐射换热将在热量传递过程中起主要作用,气体介质参与辐射传热作用很小,主要表现为表面之间的辐射换热。
Numerical Simulation of Czochralski Crystal Growth and Its Model Experiment;
提拉法晶体生长过程的数值分析及模拟实验
Studies of CdSe Single Crystal Growth and Characterization by Vapor Phase Pull Method;
气相提拉法生长CdSe单晶体及其性能表征
The Study of Czochralski Method Growth and Properties of Nd～(3+): YAG Crystal;
提拉法掺Nd～（3+）：YAG晶体的生长及性能研究
Numerical Simulation Analysis of Czochralski Growth Processes for Langasite Crystal
提拉法生长硅酸镓镧晶体过程的数值模拟分析
The Growth of Double Refraction Crystal YVO_4 by Czochralski Methodand and Study the Growth Defects
提拉法生长双折射晶体钒酸钇（YVO_4）及其缺陷研究
Effect of Annealing Treatments on Scintillation Properties of Lu_2Si_2O_7∶Ce Grown by Czochralski Method
退火对提拉法生长Lu_2Si_2O_7∶Ce晶体闪烁性能的影响
Fuzzy PID Control System for the Pulling Technique of Laser Crystal
激光晶体提拉生长模糊PID控制系统
Growth of large Ti~(3+):BeAl_2O_4 laser crystals by Czochralski method
大尺寸掺钛铝酸铍(Ti~(3+):BeAl_2O_4)激光晶体的提拉法生长
czochralski grown ingot
切克劳斯基法生长晶体
Growth of α-Al_2O_3:C Crystal by Edge-Defined,Film-Fed Growth Technique
导模法生长α-Al_2O_3:C晶体
The control system of silicon czochralski crystal-growth based on WinCC and S7-300 PLC
基于WinCC和S7-300PLC的单晶硅提拉生长控制系统
Application Research for the Czochralski Crystal-Growth System of Si on WinCC Configuration Software
基于WinCC的单晶硅提拉生长系统应用研究
HYDROTHERMAL RE-CRYSTALLIZATION PURIFICATION OF TlBr POWDER AND ITS CRYSTAL GROWTH
TlBr粉末的水热重结晶提纯和TlBr晶体生长(英文)
Synthesis of Cubic Boron Nitride Microcrystals and Exploration of Growing Its Bulk Crystals;
立方氮化硼微晶合成及体块晶体生长方法探索
Thermal Stress Distribution of GaAs and InP Crystals in LEC Growth and of GaAs Crystal in LEFZ Growth;
LEC法生长GaAs、InP晶体及LEFZ法生长GaAs晶体中热应力分布
Based on the crystal growth elementary principle,a plagioclase crystalline velocity equation is suggested.
从晶体生长的基本原理出发，提出了按非连续机制生长的斜长石晶体结晶速率表达式。
Growth and Investigation of Raman-active Double Tungstate Crystals;
双钨酸盐拉曼激光晶体的生长及物性研究
Global Simulation Crystal Growth of CdZnTe by the Detached Vertical Bridgman Method
分离结晶垂直Bridgman法生长CdZnTe晶体的全局数值模拟
