Over coming lattice and orientation mismatch, direct wafer bonding allows fabricating of structures and devices which can get through hetero-epitaxial growth.
晶片直接键合技术是材料集成的一项新工艺,是近年来集成光电子领域的研究热点之一。
A general wafer bonding criterion is deduced from minimum energy principle,which is developed by linear elastic thin plate theory.
由最小能量原理导出的键合条件出发,利用线性薄板理论,在同一理论模型框架下,通过量度键合过程能否进行的弹性应变能累积率,分析了晶片表面的宏观尺度的弯曲和微观尺度的起伏对晶片键合的影响,并对所得结果进行了详细讨论。
The results indicate that the wafer bonding was of high quality and the thermal stress of bonding.
采用扫描电镜(SEM)和电子背散射衍射(EBSD)技术,观察和分析了GaAs和GaN晶片热压键合的界面热应力和晶片键合质量。
Sequentially, the primary evaluation of the wafer bondingquality was realized.
通过分析不同工艺条件下所获得的键合片质量,包括键合率、缺陷分布以及键合强度等参数的比较,可以有助于理解晶片键合的机理,实现键合工艺的优化。
Direct wafer bonding is a new process of material integrating and has received tremendous attention in the research of optoelectronics and microelectronics field.
晶片直接键合技术是材料集成的一项新工艺，是近年来集成光电子领域的研究热点之一。
The application of wafer bonding technology in long? wave vertical cavity devices is given.
最后介绍了晶片键合技术在长波长垂直腔型器件研制中的应用。
direct-coupled transistor amplifier
直接耦合晶体管放大器
DCTL [Direct-Coupled Transistor Logic]
直接耦合电晶体逻辑
direct-coupled transistor logic
直接耦合晶体管逻辑
Research of GaAs/InP Wafer Bonding Technology;
GaAs/InP晶片键合技术的研究
Investigation of Low-Temperature Wafer Bonding and Long-Wavelength Tunable Integrated Optical Demultiplexing and Receiving Device for WDM Application;
低温晶片键合技术及长波长可调谐WDM解复用光接收集成器件的研究
Bonding Interface- The area where the bonding of two wafers occurs.
绑定面-两个晶圆片结合的接触区。
Researches on Electrical and Mechanical Characteristics of Low Temperature InP/Si Wafer Bonding;
InP/Si低温晶片键合的电特性和力学特性的研究
Theory Analysis and Experiment Research of Low Temperature Si/InP Wafer Bonding Technology;
Si/InP晶片低温键合技术的理论分析和实验研究
Experiments of Low Temperature Wafer Bonding and Analysis on Relevant Dynamics;
低温晶片键合的实验和动力学特性研究
direct-coupled transistor logic circuit
直接耦合晶体管逻辑电路
DCUTL (Direct-Coupled Unipolar Transistor Logic)
直接耦合单极晶体管逻辑
High Brightness ODR LED Based on Au/Au Wafer Bonding
基于Au/Au直接键合的高亮度ODRLED
The three dimensional temperature distribution of laser bonding with a Gaussian thermal source is modeled using the finite element method.
在硅／玻璃激光键合中，温度场的分布是影响晶片能否键合的关键因素。
The Simulation for Dynamics of Ⅲ-V Material Epitaxy Growth and the Experiment of Wafer Bonding;
Ⅲ-V族材料外延生长的动力学模拟仿真及半导体晶片键合的实验
In this process, a standard stencil printing technique is used to print solder paste directly onto silicon wafers( Figure4).
在这个过程，标准印刷技术用来把锡膏直接印刷到硅晶片上。
Theoretical Study on Spin-spin Coupling Constants of Directly Bonded Atoms;
直接键连原子间核自旋偶合常数的理论研究
