We realize for the first time the local lifetime control by means of gettering platinum through the induced defects created by proton implantation in high-voltage power diodes.
与传统扩铂技术相比 ,用此新技术制成的P i N功率二极管有可能实现更快的恢复速度、更大的软度恢复因子和更低的反向漏电。
A novel SiGe/Si hetero-junction power diode with multilayer gradual changing doping concentration in the n~-region is proposed.
n- 区掺杂浓度采用多层渐变式结构的p+ (SiGe) n- n+ 异质结功率二极管 ,对该新结构的反向恢复特性及正反向I -V特性进行了模拟 ,从器件运行机理上对模拟结果做出了详细的分析。
Here we exploit the same benefits of SiGe material in a new application area,namely ultra fast power diodes.
与同结构的传统Si二极管相比,该功率二极管可以获得更短的反向恢复时间,低的正向压降,低的反向峰值电流,较软的恢复特性。
Using MEDICI,the physical parameter models applicable for SiGeC/Si heterojunction power diodes are given.
将新器件结构与新型半导体材料相结合,提出了一种新型的n-区三层渐变掺杂理想欧姆接触型p+(SiGeC)-n--n+异质结功率二极管,并对n-区的杂质分布梯度进行了优化。
A novel SiGeC/Si heterojunction structure for p-i-n power diodes is presented.
将SiGeC技术应用于功率半导体器件的特性改进,提出了一种新型p+(SiGeC)n-n+异质结功率二极管结构。
Measurement of "smile" for high-power diode laser array
大功率二极管激光线阵的“smile”测量方法
Multiplayer bonding technique for high power diode laser
高功率二极管激光器封装的多层焊接技术
Analysis of Thermal Effects in High Power Diode Pumped Solid-State Lasers;
高功率二极管抽运固体激光器的热效应分析
Study on High Power Diode Pumped Solid-state Laser with the Double-pass Amplifer;
高功率二极管泵浦双程放大器技术研究
Research and Characteristics Analysis of Novel Structure of SiGeC/Si Power Diodes;
SiGeC/Si功率二极管新结构的研究与特性分析
Analysis and Design of Fast and Soft Recovery SiGe Hetero-junction Power Diodes;
快速软恢复SiGe异质结功率二极管的分析与设计
The Simulation and Analysis of SiGe Fast Switching Power Diode;
SiGe快速开关功率二极管的器件模拟与分析
Research on SiGeC Power Diodes with Ultra-Low Leakage Current and Ultra-Fast Recovery Characteristics
超低漏电流超快恢复SiGeC功率二极管研究
Thermally induced spherical aberration in high power diode pumped laser module
高功率二极管泵浦激光模块的热致球差
low-power Schottky diode
低功率肖特基二极管
crystal diode power indicator
晶体二极管功率指示器
Fluxless Soldering Technology for High Power Laser Diode
大功率激光二极管无助焊剂烧焊技术
High-Power Laser Diode End-Pumped Yb:YAG Repeat Frequency Laser
高功率激光二极管端面抽运重复频率Yb:YAG激光器
A typical GaP diode produces about10 times more radiant power than a typical CaAsP diode.
典型磷化镓二极管的辐射功率比典型磷砷镓二极管大10倍左右.
High power led is a kind of high intensity led.
高功率发光二极管是一种高强度的主导。
Research on influence of temperature and photoelectricity property of high power LED
大功率发光二极管光电特性及温度影响研究
The most typical high power LED is super flux LED.
最典型的高功率发光二极管超级流量为主导。
Study on the Response of p-n Jumction for High Power Microwave Illumination;
PN二极管对高功率微波激励的响应研究
