For detection of Chemiluminescence,a kind of signal acquisition system based on avalanche photodiode array(SiPM) is introduced.
以开发便携式化学发光免疫分析仪为应用目标,进行了基于雪崩击穿光电二极管阵列(SiPM)化学发光测量系统软硬件平台的设计。
Effect of polarization on current characteristics of AlN/GaN resonant tunneling diode
极化效应对AlN/GaN共振隧穿二极管电流特性的影响
The relaxation oscillation characteristics of a resonant tunneling diode (RTD) with applied pressure are reported.
报道了共振隧穿二极管(RTD)在压力下的弛豫振荡特性。
A new type of planar resonant tunneling diode(RTD) was fabricated by ion implantation.
采用离子注入方法制作了一种新型平面共振隧穿二极管(RTD),通过离子注入将器件之间进行隔离,避免了传统台面型RTD中采用的台面刻蚀所带来的一些缺点,并且表现出良好的I-V特性,峰谷电流比为3。
This paper describes a monolithic OEIC that uses resonant tunneling diodes (RTDs) and metal-semiconductor-metal photo detectors (MSM-PDs).
设计了由谐振隧穿二极管 (RTD)为驱动器件 ,以金属 -半导体 -金属光探测器(MSM PD)为光敏元件的光电集成电路单元 ,利用通用电路模拟软件PSPICE基于其物理意义的电流 -电压方程建立直流电路模型 ,模拟其暂态特性 ,结果表明器件具有反相输出功能和双稳态特性。
breakdown diode-coupled trigger
击穿二极管耦合触发器
Abnormal Breakdown Diagram of the Schottky Barrier Diodes
肖特基二极管异常击穿特性曲线的研究
The distinguishing feature of this plan is to adopt silicon backward photoelectric diode as target screen and to scan with fast electron.
特点是采用“反向击穿硅光电二极管”做靶面,并用快电子扫描。
The Effect of Annealing Treatment on Reverse Breakdown Voltage of Schottky Diodes;
退火处理对肖特基二极管反向击穿电压影响的研究
Research of Resonant Tunneling Diode on GaAs Substrate;
GaAs衬底共振隧穿二极管的研究
collector-emitter breakdown
集电极－发射极击穿
Study on Planar Resonant Tunneling Diode and Resonant Tunneling Transistor and Their Applications;
平面型共振隧穿二极管与共振隧穿晶体管的研究与应用
Study of Si/SiGe-based p-type Resonant Tunneling Diode;
基于Si/SiGe的空穴型共振隧穿二极管的研究
Investigation on the Spin Transport Properties of GaMnN-based Ferromagnetic RTD
GaMnN基共振隧穿二极管自旋器件的设计和模拟
Realization of InP-base Resonant Tunneling Diodes Through Air-bridge Technology
利用空气桥技术实现InP基共振遂穿二极管器件
Design of Chua's Circuit Based on Resonant Tunneling Diodes
基于共振隧穿二极管的蔡氏电路设计研究
Electric Charge Accumulation Effect in RTD:Lecture of Resonant Tunneling Devices(4)
共振隧穿二极管中的电荷积累效应——共振隧穿器件讲座(4)
Design on the Material Structure of RTD:Lecture of RTD(5)
共振隧穿二极管的材料结构设计——共振隧穿器件讲座(5)
Spin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diode
GaMnN铁磁共振隧穿二极管自旋电流输运以及极化效应的影响
Effect of polarization on current characteristics of AlN/GaN resonant tunneling diode
极化效应对AlN/GaN共振隧穿二极管电流特性的影响
diode other than photosensitive or light emitting diodes
二极管,光敏二极管或发光二极管除外
emitter base diode
发射极 基极二极管
Comparison and Analysis on Measurement Method of Resonant Tunneling Diode Series Resistance
共振隧穿二极管串联电阻测量方法的比较与分析
