gallium arsenide ultrared lighting transistor
砷化镓红外发光晶体管
gallium arsenide fet
砷化镓场效应晶体管
Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent(EL) Diodes(Abstract)
在砷化镓衬底上异质外延磷化镓的表面缺陷与绿色发光管(摘要)
gallium arsenide avalanche photodiode
砷化镓雪崩光电二极管
Study of the Sulfur Passivation in GaAs Microwave Power Mesfet;
砷化镓微波功率场效应晶体管的硫钝化研究
Miciowave Amplifier Using GaAs FET
采用砷化镓场效应晶体管的微波放大器
Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method
GB/T17170-1997非掺杂半绝缘砷化镓单晶深能级EL2浓度红外吸收测试方法
GaAs Microwave FET with High Gain, High Gate-Drain Breakdown Voltage and Low Noise Figure
高增益、高栅-漏击穿、低噪声微波砷化镓场效应晶体管
Studies on GaAs Surface Properties and Surface Oxidation Excited by UV Light;
砷化镓表面特性及紫外光激发下表面氧化反应研究
Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
GB/T8758-1988砷化镓外延层厚度红外干涉测量方法
far ultrared-ray photoelectric transistor
远红外线光电晶体管
ga al as semiconductor laser
镓铝砷半导体激光器
"Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide."
常用的本质半导体是硅、锗以及砷化镓等的单晶。
gallium arsenide injection laser
砷化镓注入式激光器
GaAs laser terrain profiler
砷化镓激光地形测绘仪
galinium arsenide
ph.1. 砷化镓
Numerical Simulation of Heat, Momentum and Mass Transport in LEC Growth of GaAs Crystal
LEC法砷化镓晶体生长中熔体流动与传热传质数值模拟
Boat-grown gallium arsenide single crystals and As-cut slices
GB/T11094-1989水平法砷化镓单晶及切割片
