Recently, rare-earth lanthanides doped Bi4Ti3Oi2 (BIT) with Bi-layered perovskite structure has been studied intensively for potential applications in ferroelectric random access memories (FeRAM) due to its relatively low crystallization temperature, good fatigue endurance and larger spontaneous polarization compared to SrBi2Ta2O9 (SBT)-based films.
近年来，稀有金属离子掺杂的钛酸铋(Bi_4Ti_3O_(12)，简写为BTO)铁电薄膜成为研究的热点，这种材料结晶温度较低、抗疲劳特性好、自发极化较大(相对SrBi_2Ta_2O_9薄膜来说)，所以可望成为新的铁电随机存储器(FRAM)专用材料。
RAM Random Access Memory,
随机存取存储器。内存属于这种存储器。
RAM (random access memory)
随机存储器,[港]随机存取存储器,随机接达内存
static random access memory
静态随机存取存储器
high speed semirandom access memory
高速半随机存取存储器
movable random access memory
可换式随机存取存储器
MRAM Magnetic Random Access Memory
磁性随机存取存储器
block-oriented random access memory
按区随机存取存储器
windows random access memory
视窗随机存取存储器
uniformly accessible store
均匀随机存取存储器
nonvolatile ram
非易失随机存取存储器
card random access memory
卡片随机存取存储器
video random access memory
视频随机存取存储器
rapid random access memory
快速随机存取存储器
semiconductor RAM
半导体随机存取存储器
a RAM software component
随机存取存储器软件.
Primary memory is known as random access memory (RAM) and simple named memory.
主存储器又称为随机存取存储器，简称内存。
microprocessor RAM interface
微处理机随机存取存储器接口
nonelocked RAM desig
无锁随机存取存储器设计
