The necessities of ESD protection circuits between VDD and VSS are analyzed and the operation mechanism of the VDD-to-VSS ESD protection circuit with the gate-coupled NMOS is also discussed.
分析了电源与地之间ESD保护电路的必要性,研究用于电源和地之间GCNMOS(栅极耦合NMOS)结构ESD保护电路的工作原理,在此基础上提出了一个相应的版图设计,仿真结果显示该结构的ESD失效电压达到了3 kV。
Short circuit elimination for grid components in ion rocket engine;
离子火箭发动机栅极组件短路消除方法
Analysis of the Effects of Grid on the Beam Performance;
栅极对电子注性能的影响分析
The thruster s grid is one of the many key components in the influence of the thruster life.
推力器栅极部分是影响推力器寿命的主要关键部件之一。
Particle simulation of ion thruster grids was carried out via particle-in-cell(PIC) method and numerical method for calculating the erosion depth of the accelerator grid downstream surface was developed.
使用聚焦深度表面测量(DFF)方法对加速栅极下游表面腐蚀深度进行了测量,并将测量结果与数值模拟结果进行了比较,所使用的数值方法为PIC-Monte Carlo方法。
IT with dome grids are subject to significant thrust losses due to the divergence o f the ion beam.
栅极是离子光学系统的主要组件,作者主要针对大面积球面栅的束发散较大的问题,对栅极进行了补偿设计,目的是减小束发散角。
New type gate electrode of CNT-FED fabricated by chemical corrosive method;
新型场发射器件中栅极的化学刻蚀制备(英文)
Using the high-quality mica plate as substrate materials, a new gate electrode structure was fabricated successfully with silver slurry and simple screen-printing process.
利用优质云母板作为栅极结构基底材料,结合简单的丝网印刷工艺将导电银浆制作成条状栅极,制作了新型的栅极结构;采用高温分解方法制备了碳纳米管薄膜阴极,制作了三极结构碳纳米管阴极平板显示屏样品。
By tying gate and substrate of MOSFET together,a Dynamic Threshold MOS(DTMOS) is obtained.
通过将衬底和栅极连接在一起实现了MOSFET的动态阈值,DTMOS与标准的MOSFET相比具有更高的迁移率,在栅极电压升高时DTMOS阈值电压会随之降低,从而获得了比标准的MOSFET大的电流驱动能力。
The rate of successfully fabricating device was improved with the new gate structure, which decreased the device cost and avoided the damag.
利用优质云母板作为绝缘材料,结合简单的丝网印刷工艺制作了新型的栅极结构。
A brief review of development of high K gate dielectrics is provided.
介绍了国内外对高K栅极介质的研究现状。
The high quality nanocrystalline diamond (NCD) film is successfully deposited by double bias voltage nucleation and grid bias voltage growth.
在HFCVD系统中施加栅极偏压和衬底偏压,采用双偏压成核和栅极偏压生长的方法成功制备了高质量的纳米金刚石薄膜。
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