The study on the optimizational technology of the large area free-standing diamond films mechanical polishing;
大面积金刚石自支撑膜机械抛光的优化工艺研究
This paper introduced a precision polishing experiment study on H62(φ80mm)brass with traditional precision mechanical polishing method.
本文采用传统的精密机械抛光方法,对H62黄铜(φ80mm)进行了精密抛光实验研究。
On the basis of briefly reviewing the polishing process techniques of chemically vapor deposited diamond films,an primary investigation on mechanical polishing processes for chemically vapor deposited diamond thick films was carried out using automatic polishing, as well as during polishing process, were observed by means of scanning electron microscope.
在简要综述 CVD金刚石膜光整加工方法的基础上 ,在自动抛磨机上对 CVD金刚石厚膜进行了初步的机械抛光工艺研究 ,借助扫描电子显微镜 (SEM)对抛光前后及抛光过程中 CVD金刚石膜的表面形貌变化进行了观察 ,初步讨论了 CVD金刚石的去除过程。
By strictly controlling concrete slump and second vibration technique, settlement amount is reduced, and by mechanical troweling technique.
大面积厚地坪采用软缝,可一次浇筑不留施工缝;使用内燃式振动梁找平混凝土,通过埋设振动梁轨道控制地坪标高表面平整度;接槎处设凹槽控制平整度和表面质量;采用严格控制坍落度和二次振捣工艺,控制和减少沉陷量;采用机械抹光工艺,提高抹面速度及质量;及时切割诱导缝,减少了裂缝发生的可能性。
Study on Conditioner for Polishing Pad in CMP;
化学机械抛光用抛光垫修整器的研究
Study on Electrochemical Mechanism and Polishing Rate of Chemical-Mechanical Polishing of Copper;
铜化学-机械抛光电化学机理与抛光速率的研究
Study on Conditioning Technology of Polishing Pad in CMP;
化学机械抛光中抛光垫修整技术的研究
Chemical mechanical polishing for silicon wafer by composite abrasive slurry
利用复合磨粒抛光液的硅片化学机械抛光
Study on CMP Slurry of CVD Diamond Film;
CVD金刚石膜化学机械抛光液的研制
Electroplate and chemical mechanical polishing technology of ULSI
VLSI的电镀和化学机械抛光技术
Material removal characteristic of silicon wafers in chemical mechanical polishing
单晶硅片化学机械抛光材料去除特性
ECMP of Cu in the Preparation Process of ULSI
ULSI制造中Cu的电化学机械抛光
Study on Electrochemistry and Polishing Rate of Chemical Mechanical Polishing of Semiconductor Silicon Wafer;
半导体硅片化学机械抛光电化学与抛光速率研究
Study on Pad Properties & Effects on Processing in CMP;
抛光垫特性及其对化学机械抛光效果影响的研究
Study on Dynamic Pressure and Temperature of Slurry in Chemical-Mechanical Polishing of Silicon Wafer
硅片化学机械抛光加工区域中抛光液动压和温度研究
Influence of abrasive and chemical composition on chemo-mechanical polishing of MgO single crystal substrate
抛光液中磨料和化学成分对单晶MgO基片化学机械抛光的影响
Influencing Factors of Conditioning Effect about Polishing Pad Conditioning for Chemical Mechanical Polishing
化学机械抛光用抛光垫的修整对修整效果的影响因素
Study the application of pad in chemical mechanical polishing for sapphire wafer
抛光垫在蓝宝石衬底化学机械抛光中的应用研究
Study on Chemical Mechanical Polishing of Tantalum Lithium Crystal Wafer;
光电子材料钽酸锂晶片化学机械抛光过程研究
Fluorescence enhancement of Rh6G on mechanically polished metallic substrates
机械抛光金属衬底表面对Rh6G的荧光增强效应
Study on Material Removal Mechanism for Non-contact CMP;
非接触化学机械抛光的材料去除机理研究
Specification: Metal ingot, mechanically polished, the detailed specification can be customized in size according to your request.
形状：金属锭，机械抛光，每块大小可按顾客的要求。
