To meet the application needs of high-speed and low-energy consumption digital systems,several kinds of BiCMOS open collector(OC)gates were designed by means of modifying inner structure and by using optimal parameters,with which some wired-AND logic systems were connected,and the common upward-resistance RL expressions of these systems were deduced from 2 wired-AND equivalent circuits.
为了满足高速度、低功耗数字逻辑系统的应用需求,运用改进电路内部结构和优化选取器件参数的方法,设计了4种双极互补金属氧化物半导体集电极开路(BiCMOS OC)门,并且用它们构成了线与逻辑系统;藉助两个BiCMOS OC门线与系统推导出其上拉电阻RL的计算式;对所设计的4种BiCMOS OC门和一种传统的TTL OC门线与系统进行了仿真试验和硬件电路试验。
25 μm 1P3M CMOS process is applied in the design.
25μm 1P3M的标准互补金属氧化物半导体(CMOS)工艺。
A development of infrared focal plane array (IRFPA) complementary metal oxide semiconductor (CMOS) readout integrated circuit (ROIC) is introduced.
介绍了一种红外焦平面阵列( IRFPA)互补金属氧化物半导体 ( CMOS)读出集成电路 ( ROIC)的研制方案 ,叙述了读出电路的电路原理及工作时序、电路参数设计、版图设计及工艺分析。
The radio frequency integrated circuits based on CMOS (Complementary Metal Oxide Semiconductor) process have more and more markets and prosperous future.
而基于CMOS(互补金属氧化物半导体)工艺的射频集成电路具有着广泛的市场和发展前景,无线接收机中的关键模块低噪声放大器(Low Noise Amplifier)则成为热点中的热点。
complementary metal oxide semiconductors (CMOS)
互补金属氧化物半导体
LOCMOS (Locally Oxidised Complementary Metal Oxide Semi-conductor)
局部氧化互补金属氧化物半导体
bulk cmos process
体效应互补金属氧化物半导体工艺
sos complementary metal oxide semiconductor
蓝宝石上硅互补金属氧化物半导体
dycmos integrated circuit
动态互补金属氧化物半导体集成电路
complementary metal oxide semiconductor device
互补金属氧化物半导体器件
complementary MOS memory
互补金属氧化物半导体存储器
dycmos NAND gate
动态互补金属氧化物半导体“与非”门
poly squared cmos
双层多晶硅互补金属氧化物半导体
read-write CMOS cell
读写互补金属氧化物半导体单元
CMOS microprocessor
互补金属氧化物半导体微处理机
CMOS noise immunity
互补金属氧化物半导体抗扰度
cmos on sapphire
蓝宝石上互补金属氧化物半导体
isolated silicon gate cmos
绝缘硅栅互补金属氧化物半导体
radiation hard cmos
抗辐射互补金属氧化物半导体
n well cmos process
n 阱互补金属氧化物半导体工艺
cmos on sapphire process
蓝宝石上互补金属氧化物半导体工艺
CMOS RAM (complementary metal oxide semiconductor random access memory)
互补金属氧化物半导体随机存储器
