The impurity concentration distribution in diode p-n junction can be presented with the simplified models,named as abrupt junction and the linearly graded junction,but precise measurements show there existing limitation in these tradition models.
简化的突变结或线性缓变结模型已能很好地近似二极管p-n结杂质浓度分布规律,但从精密的实验测量结果中发现传统模型存在局限性。
The universal form of power-low is formulated from Passion equation for impurity concentration distribution in diode p-n junction.
基于杂质浓度分布的突变结或线性缓变结模型,二极管p-n结(电)容—(电)压关系可简单地由C-V幂律描述。
Simulation study of the influence of the channel doping density on the characteristics of the deep sub micron grooved gate PMOSFET;
槽栅PMOSFET沟道杂质浓度对其特性影响
Based on the hydrodynamic energy transport model, the short channel effect immunity in the deep sub micron grooved gate PMOSFET is studied together with the influences of substrate and channel doping density on that effect immunity.
基于流体动力学能量输运模型 ,首先研究了槽栅器件对短沟道效应的抑制作用 ,接着研究了不同衬底和沟道杂质浓度的深亚微米槽栅PMOSFET对短沟道效应抑制的影响 ,同时与相应平面器件的特性进行了对比 。
Based on the hydrodynamic energy transport model, the influence of substrate doping density on performance for deep sub micron grooved gate PMOSFET is studied using two dimensional device simulator MEDICI and is compared to that of the counterpart conventional planar device.
研究发现 ,随着衬底掺杂浓度的提高 ,与平面器件相同 ,槽栅器件的阈值电压提高 ,漏极驱动能力降低 ,抗热载流子能力急剧退化 ;但与平面器件相比 ,槽栅器件的阈值电压受衬底杂质浓度影响较小 ;漏极驱动能力及抗热载流子性能随衬底杂质浓度提高的退化则较平面器件小得
The use of C-V technique in slowing distribution of P-N junction;
CV法测缓变PN结杂质浓度分布的研究
Effect of Concentration of Impurity NaClO_3,on Corrosion Resistance of 1Cr18Ni9Ti Stainless Steel in High-Temperature Caustic Solution
高温碱液中NaClO_3杂质浓度对1Cr18Ni9Ti耐蚀性的影响
With increasing doping concentration, the impact of neutral impurity scattering becomes more significant.
随着掺杂浓度的增加,中性杂质散射作用增强.
Study on Gettering of Low Contamination by Helium-implantation-formed Cavities in Silicon;
氦诱生微孔对硅中低浓度杂质吸除的研究
Influence of Mn Ion Doping Concentration on Electronic Structure and Optical Properties of Mn:MgAl_2O_4
Mn掺杂浓度对Mn:MgAl_2O_4电子结构和光学性质的影响
Microstructure and Spectral Property of Er~(3+) Doped Transparent Oxyfluoride Glass Ceramics with High Fluorine Contents
Er~(3+)掺杂高氟浓度透明氟氧化物玻璃陶瓷的微观结构和光谱性质
The surface in the transition region between p-type and n-type semiconductor material at which the donor and acceptor concentration are equal.
在p型和n型半导体材料之间渡越区中的一个面,在这里施主杂质和受主杂质的浓度相等。
weaken the consistency of (a chemical substance).
削弱化学物质的浓度。
metal strength of the electrolyte
电解质液中的金属浓度
Settlement Properties of Impurities in the Concentrated Wet-process Phosphoric Acid
浓缩湿法磷酸中杂质颗粒的沉降特性
reduced in strength or concentration or quality or purity.
在强度、浓度、质量或者纯度上有所减弱。
Examination of HPAM concentration in produced water with turbidity method
浊度法测定油田采出水中HPAM质量浓度
Concentration and Purification of the Dilute Contaminated Sulfuric Acid Containing Organic Impurities;
含有机杂质的稀废硫酸的浓缩与净化研究
The research of temperature-changing condensation equipment and method for determination of trace impurities in high purity hydrogen
高纯氢中痕量杂质变温浓缩装置及方法
To make uniform in consistency, especially to render(milk)uniform in consistency by emulsifying the fat content.
使均质使浓度一致，尤指通过乳化脂肠物质使（牛奶）浓度一致
On Effect of Acetic Acid on Calcium and Manganese Doping Ba_xSr_(1-x)TiO_3;
醋酸浓度对钙锰掺杂Ba_xSr_(1-x)TiO_3的影响研究
Photoluminescence of CdS/SiO_2 Core-Shell Nanostructures with Different Manganese Concentration
不同掺杂浓度的CdS:Mn/SiO_2核壳纳米结构的光致发光
Effects of boron doping on carrier concentration of diamond film
硼掺杂对金刚石薄膜载流子浓度的影响
