Then an integrated finite-difference method of GE method is presented through dealing with the boundary conditions by means of fictitious grid points method.
通过虚拟网格点法处理边界条件,得出了差分方程GE格式的完整形式。
Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method.
低温下用MBE方法生长了Ge/Si超晶格,X射线反射及横向散射研究表明,Ge亚层上下表面的粗糙度呈反对称,下表面大的粗糙度来源于Ge向Si亚层中扩散形成SiGe混合组分结构,这种组分结构可以用一平均成分的SiGe合金层加以拟合,从而使得各亚层均有一个合理的粗糙度,旋转样品进行的X射线散射研究表明,这种SiGe的混合是各向同性的,这与透射电子显微镜的研究结构相一致。
The Determination of Germanium and Impurities in Organic Germanium (Ge-132) by AAS;
原子吸收光谱法测定有机锗（Ge─132）中的锗及其杂质
Scanning tunneling microscopy (STM) and x_ray photoemission spectroscopy (XPS) studies of germanium growth on Ru(0001) were carried out.
报道Ge在Ru(0 0 0 1)表面上生长以及相互作用行为的扫描隧道显微镜 (STM)和x射线光电子能谱 (XPS)研究 。
Two metal-germanium schottky junctions on and under the waveguide were fabricated to form metal-germanium-metal photodetector and the dark current density of 0.
以外延Ge薄膜为吸收区,在Si基上制备了Ge波导光电探测器。
Epitaxy of Strain-relaxed SiGe, Ge Films and Fabrication of Ge Photodetectors on Si Substrates
Si基SiGe、Ge弛豫衬底生长及其Ge光电探测器研制
High Purity ZnS/Ge Interference Filter Emittance
高纯度ZnS/Ge干涉滤波的发射器
Studies on ZnSe/GaAs/Ge High-Efficiency Solar Cells;
ZnSe/GaAs/Ge高效太阳电池的研究
Zero-dimensional Ge and One-dimensional ZnO Nanostructures and Devices;
零维Ge和一维ZnO纳米结构与器件
Study of Nanocrystalline Ge Preparation and Neutron Transmutation Doping;
Ge纳米晶制备及中子嬗变掺杂的研究
Study on Growth of Two-terminal Monolithic GaInP_2/GaAs/Ge Tandem Solar Cell by MOCVD;
GaInP_2/GaAs/Ge级联太阳电池的MOCVD生长研究
Magnetocaloric Effect of Fe_2P-type (Mn, Fe)_2(P, Ge) Compounds;
Fe_2P型（Mn，Fe）_2（P，Ge）化合物的磁热效应
Dynamics Simulation of Nanosecond Pulsed Laser Ablation of Ge Crystal;
脉冲激光烧蚀晶体Ge的动力学模拟
Investigation on the Stress and Strain Distribution of Ge/Si Semiconductor Self-Organized Quantum Dots;
Ge/Si半导体量子点应力应变分布研究
The Isothermal Section of Gd-Fe-Ge Ternary System at 773K;
Gd-Fe-Ge三元系合金相图773K等温截面
Synthesis and Characterization of ZnSe/Ge Nanowires Heterostructures
ZnSe/Ge异质结纳米线的制备和表征
A study of RHEED pattern from the epitaxial growth of Si-Ge crystal
在Si-Ge晶体外延生长中的RHEED花样研究
Upgrading and Transformation of GE PACS/RIS system
GE PACS/RIS的升级改造
Complex fault in GE ProSpeed AI CT:case report
GE ProSpeed AI CT复杂故障1例
Two Cases of Troubleshooting of GE HT600 X-ray Machine
GE HT600 X光机维修二例
ATUOMATIC CONTROL SYSTEM OF TMEIC-GE FLYING SHEAR
TMEIC-GE飞剪自动控制系统
The three cases of faults maintenance about GE Prospeed AI
GE Prospeed AI故障维修3例
Research on Competitive Strategy of GE Security in China;
GE安防事业部中国市场竞争战略研究
