Model and analysis of 4H-SiC Schottky diode as γ-ray detector;
4H-SiC肖特基二极管γ射线探测器的模型与分析
A study of the characteristics of p-type Al/6H-SiC schottky diode;
p型Al/6H-SiC肖特基二极管特性研究
Study on model of MISiC Schottky diodes hydrogen sensor;
MISiC肖特基二极管式氢敏传感器模型研究
Application of SiC Schottky Diode in High Power Factor Correction;
SiC肖特基二极管在大功率PFC中的应用
The effect of ~(60)Co γ ray irradiation on the 1/f noise of Schottky barrier diodes;
~(60)Co γ射线辐照对肖特基二极管1/f噪声的影响
Theoretical and experimental analysis of Schottky barrier diode rectification;
肖特基二极管整流的计算与测量
Research on the Characterization Technique for Irradiation-proof Competence of Schottky Barrier Diode;
肖特基二极管抗辐照能力表征技术研究
low-power Schottky diode
低功率肖特基二极管
Studies of Characteristics of 6H-Sic Schottky Diodes;
6H-SiC肖特基二极管的特性研究
Analysis and Modeling of GaAs Schottky Diodes for THz Application
太赫兹GaAs肖特基二极管电路模型研究
Abnormal Breakdown Diagram of the Schottky Barrier Diodes
肖特基二极管异常击穿特性曲线的研究
Life Prediction of Power Schottky Barrier Diode Based on the Method of Parameter Degeneration
基于参数退化法评价功率肖特基二极管寿命
Investigation on Materials Growth and Device Fabrication of Schottky Barrier Diodes
肖特基二极管相关材料生长及器件研究
Research on the Characterization Technique for Irradiation-proof Competence of Schottky Barrier Diode;
肖特基二极管抗辐照能力表征技术研究
Schottky diodes are incorporated in inputs and outputs to clamp undershoot (see Figure 16).
肖特基二极管一起对输入和输出负过冲进行箝位(参见图16)。
The Effect of Annealing Treatment on Reverse Breakdown Voltage of Schottky Diodes;
退火处理对肖特基二极管反向击穿电压影响的研究
schottky barrier photodiode
肖特基势垒光电二极管
silicon high-current Schottky barrier switching diode
硅大电流肖特基开关二极管
Schottky-barrier avalanche photodiode
肖特基势垒雪崩光电二极管
A STUDY ON STATIC I-V CHARACTERISTICS FOR SILICON CARBIDE SCHOTTKY BARRIER DIODES;
碳化硅肖特基势垒二极管静态特性的研究
Schottky emitter type transistor
肖特基发射极型晶体管
The Fabrication of Au/4H-SiC Semitransparent Schottky UV Photodiode;
Au/4H-SiC半透明肖特基UV光电二极管的研制
Effects of High-temperature Electron Irradiation in n-GaN Schottky Barrier Diode;
n-GaN肖特基势垒二极管的高温电子辐照效应
Gamma-ray radiation effect on Ni/4H-SiC SBD
Ni/4H-SiC肖特基势垒二极管的γ射线辐照效应
In this paper, a new method of complete calibration of six-portmeasurement system is presented which uses the low-barrier Schottky diode detectors for power detection.
本文提出了用肖特基低势垒二极管检波器检测功率的六端口测量系统整体校准的新方法。
